We are pleased to inform our Joint publication between XLIM Laboratory France and UMS – United Monolithic Semiconductor, entitled “Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy”

We are pleased to inform our Joint publication between XLIM Laboratory France and UMS – United Monolithic Semiconductor, entitled “Fe-Related Trapping and Detrapping Dynamics in AlGaN/GaN HEMTs Inspected by Drain Current Transient (DCT) Spectroscopy”, published in “IEEE Transactions on Device and Materials Reliability” (IEEE TDMR).  The paper outcomes are intended to evaluate the trapping-induced dynamic drifts in the large-signal performance of the GaN-based RF HEMTs.  We congratulate Ms. Vaidehi Painter for her work and thank our XLIM and UMS collaborators for their constant support. The paper DOI: 10.1109/TDMR.2025.3602857