Mr. Vivek Jaiswal developed “Accurate TCAD Simulation Model for High Performance 4H-SiC Alpha-particle Detectors” with the supervision of Prof. P. Vigneshwara Raja.

Mr. Vivek Jaiswal developed “Accurate TCAD Simulation Model for High Performance 4H-SiC Alpha-particle Detectors” with the supervision of                     Prof. P. Vigneshwara Raja. This work has been published in IEEE Transactions on Nuclear Sciences (TNS). The detector dark current is modeled using Trap-Assisted Tunneling (TAT). Especially, a novel Heavy-Ion (HI) TCAD model is proposed to validate the charge collection efficiency (CCE) in the entire voltage range, which includes both drift and diffusion-induced transient currents contributing to the CCE. The developed TCAD model can predict the detector characteristics under different operating conditions, which benefits the SiC nuclear detector society.